Event Details

Rachel S. Goldman, Professor, University of Michigan, Department of MSE, EECS, & Physics is presenting.

Highly mismatched "designer" alloys are materials that contain chemical  elements with very different atomic sizes and abilities to attract nearby electrons. When a few atoms with larger or smaller atomic sizes are added to a host material, its electrical and optical properties often change dramatically.

In this talk, we present combined computational experimental studies which enabled our pioneering epitaxy and band structure engineering of GaAs(N):Bi alloys. In addition to describing recent advances in surface reconstruction driven control of solute incorporation and atomic ordering, we present a new “magic ratio” for lattice matching of GaAsNBi with GaAs substrates. We also present a strategy for the synthesis and tailored electronic structure of III V bismuthides for integration with III V based electronics. 

Pizza snack.